| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs |
|
| 卷 50, 编号 10 (2016) |
Physics of Semiconductor Devices |
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis |
|
| 卷 51, 编号 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
InGaN/GaN light-emitting diode microwires of submillimeter length |
|
| 卷 52, 编号 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography |
|
| 卷 52, 编号 14 (2018) |
Nanostructure Devices |
Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs |
|
| 卷 53, 编号 16 (2019) |
Nanostructures Technology |
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam |
|
