| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 3 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation |
|
| Volume 50, Nº 10 (2016) |
Physics of Semiconductor Devices |
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis |
|
| Volume 50, Nº 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors |
|
| Volume 51, Nº 3 (2017) |
Physics of Semiconductor Devices |
AlN/GaN heterostructures for normally-off transistors |
|
| Volume 52, Nº 15 (2018) |
Technological Processes and Routes |
Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures |
|
| Volume 53, Nº 15 (2019) |
Technological Processes and Routes |
Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC |
|
