| Edição |
Seção |
Título |
Arquivo |
| Volume 51, Nº 3 (2017) |
Electronic Properties of Semiconductors |
Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers |
|
| Volume 51, Nº 8 (2017) |
Spectroscopy, Interaction with Radiation |
Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers |
|
| Volume 51, Nº 12 (2017) |
Electronic Properties of Semiconductors |
Radiation-produced defects in germanium: Experimental data and models of defects |
|
| Volume 52, Nº 3 (2018) |
Electronic Properties of Semiconductors |
Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers |
|
| Volume 52, Nº 7 (2018) |
Physics of Semiconductor Devices |
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System |
|
| Volume 52, Nº 12 (2018) |
Physics of Semiconductor Devices |
Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects |
|
| Volume 52, Nº 13 (2018) |
Electronic Properties of Semiconductors |
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge |
|
| Volume 52, Nº 13 (2018) |
Physics of Semiconductor Devices |
Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles |
|
| Volume 53, Nº 4 (2019) |
Physics of Semiconductor Devices |
Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes |
|
| Volume 53, Nº 7 (2019) |
Physics of Semiconductor Devices |
Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons |
|
| Volume 53, Nº 10 (2019) |
Physics of Semiconductor Devices |
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes |
|
| Volume 53, Nº 12 (2019) |
Electronic Properties of Semiconductors |
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs |
|
