| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells |
|
| Том 50, № 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors |
|
| Том 52, № 7 (2018) |
Physics of Semiconductor Devices |
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System |
|
