Informaçao sobre o Autor
Markevich, V. P.
| Edição | Seção | Título | Arquivo |
| Volume 50, Nº 6 (2016) | Electronic Properties of Semiconductors | Radiation-induced bistable centers with deep levels in silicon n+–p structures | |
| Volume 50, Nº 8 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies | |
| Volume 52, Nº 9 (2018) | Spectroscopy, Interaction with Radiation | Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals |