Автор туралы ақпарат
Nikolaev, V. I.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 50, № 4 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy | |
| Том 50, № 7 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates | |
| Том 53, № 6 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy |