| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 5 (2016) |
Physics of Semiconductor Devices |
Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
|
| Том 52, № 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide |
|
| Том 52, № 13 (2018) |
Surfaces, Interfaces, and Thin Films |
Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films |
|
| Том 53, № 1 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining |
|
| Том 53, № 4 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films |
|
