Informaçao sobre o Autor
Voronenkov, V. V.
| Edição | Seção | Título | Arquivo |
| Volume 50, Nº 5 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates | |
| Volume 51, Nº 1 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire | |
| Volume 51, Nº 9 (2017) | Physics of Semiconductor Devices | Hopping conductivity and dielectric relaxation in Schottky barriers on GaN |