Informaçao sobre o Autor
Zabrodskiy, V. V.
| Edição | Seção | Título | Arquivo |
| Volume 50, Nº 2 (2016) | Physics of Semiconductor Devices | Si:Si LEDs with room-temperature dislocation-related luminescence | |
| Volume 50, Nº 2 (2016) | Physics of Semiconductor Devices | Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties | |
| Volume 50, Nº 2 (2016) | Physics of Semiconductor Devices | Electroluminescence properties of LEDs based on electron-irradiated p-Si |