Informaçao sobre o Autor

Zemlyakov, V. E.

Edição	Seção	Título	Arquivo
Volume 50, Nº 2 (2016)	Physics of Semiconductor Devices	Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
Volume 50, Nº 3 (2016)	Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena	Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation
Volume 50, Nº 10 (2016)	Physics of Semiconductor Devices	effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
Volume 51, Nº 3 (2017)	Physics of Semiconductor Devices	AlN/GaN heterostructures for normally-off transistors
Volume 52, Nº 15 (2018)	Technological Processes and Routes	Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures
Volume 53, Nº 15 (2019)	Technological Processes and Routes	Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC