Автор туралы ақпарат
Parnes, Ya. M.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 50, № 2 (2016) | Physics of Semiconductor Devices | Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation | |
| Том 51, № 3 (2017) | Physics of Semiconductor Devices | AlN/GaN heterostructures for normally-off transistors |