| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates |
|
| Volume 50, Nº 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells |
|
| Volume 53, Nº 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers |
|
