Pesquisa

Edição
Título
Autores
Volume 50, Nº 3 (2016)
Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy
Pchelyakov O., Mikhlin Y., Parshin A., Kushchenkov S.
PDF
(Eng)
Volume 50, Nº 4 (2016)
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides
Borisenko S.
PDF
(Eng)
Volume 53, Nº 14 (2019)
Plasmons in Infinite 2D Electron System Screened by the Disk-Shaped Metallic Gate
Zabolotnykh A., Volkov V.
PDF
(Eng)
Volume 52, Nº 16 (2018)
Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications
Ajayan J., Ravichandran T., Mohankumar P., Prajoon P., Pravin J., Nirmal D.
PDF
(Eng)
Volume 50, Nº 3 (2016)
Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon
Chubenko E., Redko S., Sherstnyov A., Petrovich V., Kotov D., Bondarenko V.
PDF
(Eng)
Volume 53, Nº 12 (2019)
Modification of Carbon-Nanotube Wettability by Ion Irradiation
Morkovkin A., Vorobyeva E., Evseev A., Balakshin Y., Shemukhin A.
PDF
(Eng)
Volume 52, Nº 12 (2018)
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy
Mizerov A., Timoshnev S., Sobolev M., Nikitina E., Shubina K., Berezovskaia T., Shtrom I., Bouravleuv A.
PDF
(Eng)
Volume 53, Nº 16 (2019)
Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods
Astankova K., Gorokhov E., Azarov I., Volodin V., Latyshev A.
PDF
(Eng)
Volume 53, Nº 10 (2019)
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
Lebedev A., Kozlovski V., Ivanov P., Levinshtein M., Zubov A.
PDF
(Eng)
Volume 52, Nº 12 (2018)
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation
Venediktov M., Dukov D., Krevskiy M., Metelkin I., Chukov G., Elesin V., Obolensky S., Bozhen’kina A., Tarasova E., Fefelov A.
PDF
(Eng)
Volume 50, Nº 3 (2016)
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation
Tarasova E., Khananova A., Obolensky S., Zemlyakov V., Sveshnikov Y., Egorkin V., Ivanov V., Medvedev G., Smotrin D.
PDF
(Eng)
Volume 53, Nº 15 (2019)
Study of the Formation Process of Memristor Structures Based on Copper Sulfide
Belov A., Golishnikov A., Mastinin A., Perevalov A., Shevyakov V.
PDF
(Eng)
Volume 53, Nº 10 (2019)
Magnetosonic Waves in a Two-Dimensional Electron Fermi Liquid
Alekseev P.
PDF
(Eng)
Volume 52, Nº 12 (2018)
Formation of a Graphene-Like SiN Layer on the Surface Si(111)
Mansurov V., Galitsyn Y., Malin T., Teys S., Fedosenko E., Kozhukhov A., Zhuravlev K., Cora I., Pécz B.
PDF
(Eng)
Volume 50, Nº 3 (2016)
Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well
Hasanov K., Huseynov J., Dadashova V., Aliyev F.
PDF
(Eng)
Volume 53, Nº 15 (2019)
Electron Microscopy Study of Silver Nanoparticles Obtained by Thermal Evaporation
Grishina Y., Borgardt N., Volkov R., Gromov D., Savitskiy A.
PDF
(Eng)
Volume 53, Nº 10 (2019)
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors
Shobolova T., Korotkov A., Petryakova E., Lipatnikov A., Puzanov A., Obolensky S., Kozlov V.
PDF
(Eng)
Volume 52, Nº 11 (2018)
Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells
Dobretsova A., Kvon Z., Braginskii L., Entin M., Mikhailov N.
PDF
(Eng)
Volume 50, Nº 3 (2016)
On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC
Kyuregyan A.
PDF
(Eng)
Volume 53, Nº 14 (2019)
Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures
Goray L., Pirogov E., Nikitina E., Ubyivovk E., Gerchikov L., Ipatov A., Dashkov A., Sobolev M., Ilkiv I., Bouravlev A.
PDF
(Eng)
Volume 53, Nº 9 (2019)
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
Sushkov A., Pavlov D., Shengurov V., Denisov S., Chalkov V., Baidus N., Rykov A., Kryukov R.
PDF
(Eng)
Volume 50, Nº 13 (2016)
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy
Lovygin M., Borgardt N., Bugaev A., Volkov R., Seibt M.
PDF
(Eng)
Volume 50, Nº 2 (2016)
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
Lobanov D., Novikov A., Andreev B., Bushuykin P., Yunin P., Skorohodov E., Krasilnikova L.
PDF
(Eng)
Volume 53, Nº 14 (2019)
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
Eliseyev I., Davydov V., Smirnov A., Nestoklon M., Dementev P., Lebedev S., Lebedev A., Zubov A., Mathew S., Pezoldt J., Bokai K., Usachov D.
PDF
(Eng)
Volume 53, Nº 9 (2019)
Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices
Obolenskaya E., Ivanov A., Pavelyev D., Kozlov V., Vasilev A.
PDF
(Eng)
1 - 25 de 30 resultados 1 2 > >> 
Dicas:
  • Palavras-chave são sensíveis a maiúsculas
  • Preposições e conjunções ingleses são ignoradas
  • Busca é feita por todos os palavras-chave (agente AND experimentador) por omissão
  • Use OR para pesquisar um termo exato, ex.: educação OR formação
  • Use parênteses para criar frases complexas, ex.: arquivo de ((revistas OR conferências) NOT teses)
  • Para pesquisar uma frase precisa use aspas duplas, ex.: "investigações científicas"
  • Exclua uma palavra utilizando o sinal - (hífen) ou operador NOT; ex.: concurso-de beleza ou concurso NOT de beleza
  • Use * como caractere-coringa, ex.: científic* recuperará as palavras "científico", "científicos", etc.