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Том 50, № 4 (2016)
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides
Borisenko S.
PDF
(Eng)
Том 50, № 3 (2016)
Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy
Pchelyakov O., Mikhlin Y., Parshin A., Kushchenkov S.
PDF
(Eng)
Том 53, № 15 (2019)
Electron Microscopy Study of Silver Nanoparticles Obtained by Thermal Evaporation
Grishina Y., Borgardt N., Volkov R., Gromov D., Savitskiy A.
PDF
(Eng)
Том 53, № 10 (2019)
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors
Shobolova T., Korotkov A., Petryakova E., Lipatnikov A., Puzanov A., Obolensky S., Kozlov V.
PDF
(Eng)
Том 52, № 11 (2018)
Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells
Dobretsova A., Kvon Z., Braginskii L., Entin M., Mikhailov N.
PDF
(Eng)
Том 50, № 3 (2016)
On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC
Kyuregyan A.
PDF
(Eng)
Том 53, № 14 (2019)
Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures
Goray L., Pirogov E., Nikitina E., Ubyivovk E., Gerchikov L., Ipatov A., Dashkov A., Sobolev M., Ilkiv I., Bouravlev A.
PDF
(Eng)
Том 53, № 9 (2019)
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
Sushkov A., Pavlov D., Shengurov V., Denisov S., Chalkov V., Baidus N., Rykov A., Kryukov R.
PDF
(Eng)
Том 50, № 13 (2016)
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy
Lovygin M., Borgardt N., Bugaev A., Volkov R., Seibt M.
PDF
(Eng)
Том 50, № 2 (2016)
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
Lobanov D., Novikov A., Andreev B., Bushuykin P., Yunin P., Skorohodov E., Krasilnikova L.
PDF
(Eng)
Том 53, № 14 (2019)
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
Eliseyev I., Davydov V., Smirnov A., Nestoklon M., Dementev P., Lebedev S., Lebedev A., Zubov A., Mathew S., Pezoldt J., Bokai K., Usachov D.
PDF
(Eng)
Том 53, № 9 (2019)
Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices
Obolenskaya E., Ivanov A., Pavelyev D., Kozlov V., Vasilev A.
PDF
(Eng)
Том 50, № 5 (2016)
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range
Egorov A., Karachinsky L., Novikov I., Babichev A., Nevedomskiy V., Bugrov V.
PDF
(Eng)
Том 50, № 2 (2016)
On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin
Ryabtsev S., Chuvenkova O., Kannykin S., Popov A., Ryabtseva N., Voischev S., Turishchev S., Domashevskaya E.
PDF
(Eng)
Том 53, № 14 (2019)
Microwave Absorption by Axisymmetric Plasmon Mode in 2D Electron Disk
Zagorodnev I., Rodionov D., Zabolotnykh A., Volkov V.
PDF
(Eng)
Том 53, № 8 (2019)
Spin–Orbit Interaction and Carrier Mobility in a Longitudinal InSb Autosoliton under a Magnetic Field
Kamilov I., Stepurenko A., Gummetov A.
PDF
(Eng)
Том 50, № 2 (2016)
On the surface photovoltaic effect in a multivalley semiconductor in an external magnetic field
Rasulov V., Rasulov R.
PDF
(Eng)
Том 53, № 14 (2019)
Plasmons in Infinite 2D Electron System Screened by the Disk-Shaped Metallic Gate
Zabolotnykh A., Volkov V.
PDF
(Eng)
Том 52, № 16 (2018)
Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications
Ajayan J., Ravichandran T., Mohankumar P., Prajoon P., Pravin J., Nirmal D.
PDF
(Eng)
Том 50, № 3 (2016)
Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon
Chubenko E., Redko S., Sherstnyov A., Petrovich V., Kotov D., Bondarenko V.
PDF
(Eng)
Том 53, № 12 (2019)
Modification of Carbon-Nanotube Wettability by Ion Irradiation
Morkovkin A., Vorobyeva E., Evseev A., Balakshin Y., Shemukhin A.
PDF
(Eng)
Том 52, № 12 (2018)
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy
Mizerov A., Timoshnev S., Sobolev M., Nikitina E., Shubina K., Berezovskaia T., Shtrom I., Bouravleuv A.
PDF
(Eng)
Том 53, № 16 (2019)
Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods
Astankova K., Gorokhov E., Azarov I., Volodin V., Latyshev A.
PDF
(Eng)
Том 53, № 10 (2019)
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
Lebedev A., Kozlovski V., Ivanov P., Levinshtein M., Zubov A.
PDF
(Eng)
Том 52, № 12 (2018)
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation
Venediktov M., Dukov D., Krevskiy M., Metelkin I., Chukov G., Elesin V., Obolensky S., Bozhen’kina A., Tarasova E., Fefelov A.
PDF
(Eng)
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