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Vol 50, No 13 (2016)
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy
Lovygin M.V., Borgardt N.I., Bugaev A.S., Volkov R.L., Seibt M.
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(Eng)
Vol 53, No 14 (2019)
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
Eliseyev I.A., Davydov V.Y., Smirnov A.N., Nestoklon M.O., Dementev P.A., Lebedev S.P., Lebedev A.A., Zubov A.V., Mathew S., Pezoldt J., Bokai K.A., Usachov D.Y.
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(Eng)
Vol 53, No 9 (2019)
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates
Mizerov A.M., Timoshnev S.N., Nikitina E.V., Sobolev M.S., Shubin K.Y., Berezovskaia T.N., Mokhov D.V., Lundin W.V., Nikolaev A.E., Bouravleuv A.D.
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(Eng)
Vol 52, No 11 (2018)
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon
Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kotlyar K.P., Ilkiv I.V., Soshnikov I.P., Kirilenko D.A., Kryzhanovskaya N.V.
PDF
(Eng)
Vol 50, No 13 (2016)
Improving the functional characteristics of gallium nitride during vapor phase epitaxy
Vigdorovich E.N.
PDF
(Eng)
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