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Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions
Davydov V.Y., Jmerik V.N., Roginskii E.M., Kitaev Y.E., Beltukov Y.M., Smirnov M.B., Nechaev D.V., Smirnov A.N., Eliseyev I.A., Brunkov P.N., Ivanov S.V.
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD
Aleshkin V.Y., Baidus N.V., Dubinov A.A., Kudryavtsev K.E., Nekorkin S.M., Kruglov A.V., Reunov D.G.
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy
Gagis G.S., Levin R.V., Marichev A.E., Pushnyi B.V., Scheglov M.P., Ber B.Y., Kazantsev D.Y., Kudriavtsev Y.A., Vlasov A.S., Popova T.B., Chistyakov D.V., Kuchinskii V.I., Vasil’ev V.I.
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties
Sorokin S.V., Avdienko P.S., Sedova I.V., Kirilenko D.A., Yagovkina M.A., Smirnov A.N., Davydov V.Y., Ivanov S.V.
Recombination in GaAs pin Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities
Mintairov M.A., Evstropov V.V., Mintairov S.A., Salii R.A., Shvarts M.Z., Kalyuzhnyy N.A.
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