Мақаланы E-mail арқылы жіберу On a new method of heterojunction formation in III–V nanowires
- Авторлар: Sibirev N.V.1,2, Koryakin A.A.1,2, Dubrovskii V.G.1,3,4,5
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Мекемелер:
- St. Petersburg National Research Academic University—Nanotechnology Research and Education Center
- St. Petersburg State Polytechnic University
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- St. Petersburg State University
- Ioffe Physical–Technical Institute
- Шығарылым: Том 50, № 12 (2016)
- Беттер: 1566-1568
- Бөлім: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journal-vniispk.ru/1063-7826/article/view/198761
- DOI: https://doi.org/10.1134/S1063782616120198
- ID: 198761
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Аннотация
The process of the formation of axial heterostructures in nanowires is considered on the basis of the vapor–liquid–solid model of growth. A new method of heterostructure formation in (Al, Ga)As nanowires by varying the arsenic flux is proposed.
Авторлар туралы
N. Sibirev
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; St. Petersburg State Polytechnic University
Хат алмасуға жауапты Автор.
Email: NickSibirev@yandex.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 195251
A. Koryakin
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; St. Petersburg State Polytechnic University
Email: NickSibirev@yandex.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 195251
V. Dubrovskii
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics; St. Petersburg State University; Ioffe Physical–Technical Institute
Email: NickSibirev@yandex.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 199034; St. Petersburg, 194021
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