Lifetime of excess electrons in Cu–Zn–Sn–Se powders

G. F. Novikov; M. V. Gapanovich; V. F. Gremenok; K. V. Bocharov; W. -T. Tsai; Ming-Jer Jeng; Liann-Be Chang

doi:10.1134/S1063782617010171

Lifetime of excess electrons in Cu–Zn–Sn–Se powders

Авторлар: Novikov G.F.¹, Gapanovich M.V.¹, Gremenok V.F.², Bocharov K.V.¹, Tsai W.-.³, Jeng M.³, Chang L.³
Мекемелер:
1. Institute of Problems in Chemical Physics
2. Scientific and Practical Center for Materials Science
3. Department of Electronic Engineering
Шығарылым: Том 51, № 1 (2017)
Беттер: 18-22
Бөлім: Electronic Properties of Semiconductors
URL: https://journal-vniispk.ru/1063-7826/article/view/199280
DOI: https://doi.org/10.1134/S1063782617010171
ID: 199280

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Аннотация

The method of time-resolved microwave photoconductivity at a frequency of 36 GHz in the range of temperatures of 200–300 K is used to study the kinetics of the annihilation of charge carriers in Cu–Zn–Sn–Se powders obtained by the solid-phase method of synthesis in cells. The lifetime of excess electrons at room temperature is found to be shorter than 5 ns. The activation energy for the process of recombination amounted to E_a ~ 0.054 eV.