Thermoelectric properties of the Mg2Ge0.3Sn0.7 solid solution with p-type conductivity
- Авторлар: Isachenko G.N.1,2, Samunin A.Y.1, Zaitsev V.K.1, Gurieva E.A.1, Konstantinov P.P.1
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Мекемелер:
- Ioffe Institute
- ITMO University
- Шығарылым: Том 51, № 8 (2017)
- Беттер: 1005-1008
- Бөлім: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://journal-vniispk.ru/1063-7826/article/view/200813
- DOI: https://doi.org/10.1134/S1063782617080127
- ID: 200813
Дәйексөз келтіру
Аннотация
The thermoelectric properties of the Mg2Ge0.3Sn0.7 solid solution doped with Ga and Li are studied. The samples with a hole concentration as high as 5 × 1020 cm–3 are obtained. The temperature dependences of the thermopower, electrical conductivity, and thermal conductivity are measured in the range from room temperature to 800 K. A higher mobility of free charge carriers is observed in the samples doped with lithium than in the samples doped with gallium. The largest thermoelectric figure of merit in the samples under study amounts to 0.42 at 700 K.
Авторлар туралы
G. Isachenko
Ioffe Institute; ITMO University
Хат алмасуға жауапты Автор.
Email: g.isachenko@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101
A. Samunin
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
Ресей, St. Petersburg, 194021
V. Zaitsev
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
Ресей, St. Petersburg, 194021
E. Gurieva
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
Ресей, St. Petersburg, 194021
P. Konstantinov
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
Ресей, St. Petersburg, 194021
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