Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers
- 作者: Sekerbayev K.S.1,2, Taurbayev Y.T.1,2, Efimova A.I.3, Timoshenko V.Y.3,4, Taurbayev T.I.1,2
-
隶属关系:
- Scientific-Research Institute of Experimental and Theoretical Physics
- National Nanotechnology Laboratory of Open Type
- Faculty of Physics, Moscow State University
- National Research Nuclear University “MEPhI”
- 期: 卷 51, 编号 8 (2017)
- 页面: 1047-1051
- 栏目: Surfaces, Interfaces, and Thin Films
- URL: https://journal-vniispk.ru/1063-7826/article/view/200991
- DOI: https://doi.org/10.1134/S1063782617080279
- ID: 200991
如何引用文章
详细
The infrared optical properties of anisotropic mesoporous silicon films containing free charge carriers (holes) are studied experimentally and theoretically. The results of simulation of the optical properties of the produced samples in the effective-medium approximation show a heavy dependence of the birefringence, reflection anisotropy, and dichroism on the concentration of free charge carriers. The unsteady behavior of the differential transmittance recorded for the samples at mutually perpendicular polarization directions of light are attributed to the effect of charge carriers with a concentration on the order of 1019 cm–3. The results of the study suggest that anisotropic silicon nanostructures are promising materials for infrared photonics and terahertz engineering.
作者简介
K. Sekerbayev
Scientific-Research Institute of Experimental and Theoretical Physics; National Nanotechnology Laboratory of Open Type
Email: vtimoshe@gmail.com
哈萨克斯坦, Almaty, 050040; Almaty, 050040
Ye. Taurbayev
Scientific-Research Institute of Experimental and Theoretical Physics; National Nanotechnology Laboratory of Open Type
Email: vtimoshe@gmail.com
哈萨克斯坦, Almaty, 050040; Almaty, 050040
A. Efimova
Faculty of Physics, Moscow State University
Email: vtimoshe@gmail.com
俄罗斯联邦, Moscow, 119991
V. Timoshenko
Faculty of Physics, Moscow State University; National Research Nuclear University “MEPhI”
编辑信件的主要联系方式.
Email: vtimoshe@gmail.com
俄罗斯联邦, Moscow, 119991; Moscow, 115409
T. Taurbayev
Scientific-Research Institute of Experimental and Theoretical Physics; National Nanotechnology Laboratory of Open Type
Email: vtimoshe@gmail.com
哈萨克斯坦, Almaty, 050040; Almaty, 050040
补充文件
