Enviar artigo por via de e-mail Formation of graphite/sic structures by the thermal decomposition of silicon carbide
- Autores: Mynbaeva M.G.1,2, Lavrent’ev A.A.1, Mynbaev K.D.1,2
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Afiliações:
- Ioffe Physical–Technical Institute
- St. Petersburg National Research University of Information Technologies, Mechanics and Optics
- Edição: Volume 50, Nº 1 (2016)
- Páginas: 138-142
- Seção: Physics of Semiconductor DevicesFabrication, Treatment, and Testing of Materials and Structures
- URL: https://journal-vniispk.ru/1063-7826/article/view/196721
- DOI: https://doi.org/10.1134/S1063782616010176
- ID: 196721
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Resumo
The conditions in which carbon layers are synthesized on the surface of silicon carbide (SiC) wafers by thermal decomposition are studied. The effect of temperature and composition of the gas atmosphere on the structural properties of the layers being synthesized is analyzed. The conditions in which continuous graphite films with both single-crystal and polycrystalline structure can be obtained are determined.
Sobre autores
M. Mynbaeva
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Autor responsável pela correspondência
Email: mgm@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101
A. Lavrent’ev
Ioffe Physical–Technical Institute
Email: mgm@mail.ioffe.ru
Rússia, St. Petersburg, 194021
K. Mynbaev
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Email: mgm@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101
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