Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si


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Resumo

The temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with p-type conductivity are investigated. The current transfer mechanisms in the structures and their influence on the photosensitivity of structures with different amounts of gold in the composite layer are determined.

Sobre autores

M. Teplyakov

Peter the Great St. Petersburg Polytechnic University

Autor responsável pela correspondência
Email: twarm@mail.ru
Rússia, St. Petersburg, 195251

O. Ken

Ioffe Institute

Email: twarm@mail.ru
Rússia, St. Petersburg, 194021

D. Goryachev

Ioffe Institute

Email: twarm@mail.ru
Rússia, St. Petersburg, 194021

O. Sreseli

Ioffe Institute

Email: twarm@mail.ru
Rússia, St. Petersburg, 194021

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