On the Properties of Isoparametric AlInGaAsP/InP Heterostructures
- Авторы: Alfimova D.L.1, Lunin L.S.1, Lunina M.L.1, Pashchenko A.S.1, Danilina E.M.1
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Учреждения:
- Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
- Выпуск: Том 53, № 7 (2019)
- Страницы: 887-891
- Раздел: Surfaces, Interfaces, and Thin Films
- URL: https://journal-vniispk.ru/1063-7826/article/view/206457
- DOI: https://doi.org/10.1134/S1063782619070029
- ID: 206457
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Аннотация
The effect of growth conditions on the structural perfection of AlInGaAsP/InP thin-film heterostructures is discussed. The key parameters determining the structural perfection and surface quality of thin AlInGaAsP epitaxial films grown on indium-phosphide substrates from the liquid phase in a temperature-gradient field are determined.
Об авторах
D. Alfimova
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don, 344006
L. Lunin
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don, 344006
M. Lunina
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don, 344006
A. Pashchenko
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don, 344006
E. Danilina
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don, 344006
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