Effect of the Samarium Impurity on the Local Structure of Se95Te5 Chalcogenide Glassy Semiconductor and Current Passage through Al–Se95Te5〈Sm〉–Te Structures


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Resumo

The effect of samarium doping on the local structure and morphological features of the surface of a Se95Te5 chalcogenide glassy semiconductor film is investigated by X-ray diffraction analysis and atomic force microscopy, and the effect of doping on the current flow through Al–Se95Te5〈Sm〉–Te structures is examined by measuring the IV characteristics in the steady-state mode. The results obtained are interpreted using Lampert’s theory of injection currents, the Elliott void-cluster model, and the Mott and Street charged defects model proposed for chalcogenide glasses.

Sobre autores

S. Ataeva

Abdullaev Institute of Physics, Azerbaijan National Academy of Sciences

Autor responsável pela correspondência
Email: seva_atayeva@mail.ru
Azerbaijão, Baku, Az-1143

S. Mekhtieva

Abdullaev Institute of Physics, Azerbaijan National Academy of Sciences

Email: seva_atayeva@mail.ru
Azerbaijão, Baku, Az-1143

A. Isaev

Abdullaev Institute of Physics, Azerbaijan National Academy of Sciences

Email: seva_atayeva@mail.ru
Azerbaijão, Baku, Az-1143

S. Garibova

Abdullaev Institute of Physics, Azerbaijan National Academy of Sciences; Khazar University

Email: seva_atayeva@mail.ru
Azerbaijão, Baku, Az-1143; Baku, Az-1096

A. Huseynova

Abdullaev Institute of Physics, Azerbaijan National Academy of Sciences

Email: seva_atayeva@mail.ru
Azerbaijão, Baku, Az-1143

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