Thermoelectric effects in nanoscale layers of manganese silicide

Аннотация

The values of the thermoelectric power, layer resistivity and thermal conductivity of a Mn_xSi_1–x nanoscale layer and Mn_xSi_1–x/Si superlattice on silicon depending on the growth temperature in the range T = 300–600 K are found experimentally. The contribution of the nanoscale film and substrate to the thermoelectric effect is discussed. The thermoelectric figure of merit of a single manganese-ssilicide layer, superlattice, and layer/substrate system is estimated. The largest figure of merit ZT = 0.59 ± 0.06 is found for Mn_0.2Si_0.8 at T = 600 K.