Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs
- 作者: Ageeva N.N.1, Bronevoi I.L.1, Zabegaev D.N.1, Krivonosov A.N.1
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隶属关系:
- Kotel’nikov Institute of Radio Engineering and Electronics
- 期: 卷 51, 编号 5 (2017)
- 页面: 565-570
- 栏目: Electronic Properties of Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/199828
- DOI: https://doi.org/10.1134/S1063782617050025
- ID: 199828
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详细
The dynamics of the long-wavelength edge of the spectrum of intrinsic stimulated picosecond emission occurring upon the picosecond pumping of GaAs is studied experimentally. The shortage of bandgap renormalization induced by the Coulomb interaction of charge carriers, compared to renormalization in the quasi-steady state, is observed. It is conceived that the shortage is caused by the fact that, under the experimental conditions of the study, the renormalization relaxation time is in the picosecond region.
作者简介
N. Ageeva
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
俄罗斯联邦, Moscow, 125009
I. Bronevoi
Kotel’nikov Institute of Radio Engineering and Electronics
编辑信件的主要联系方式.
Email: bil@cplire.ru
俄罗斯联邦, Moscow, 125009
D. Zabegaev
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
俄罗斯联邦, Moscow, 125009
A. Krivonosov
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
俄罗斯联邦, Moscow, 125009
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