Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation

Z. A. Jahangirli; F. M. Hashimzade; D. A. Huseynova; B. G. Mehdiyev; N. B. Mustafaev

doi:10.1134/S1063782618070060

Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation

Авторлар: Jahangirli Z.A.¹^,2, Hashimzade F.M.¹, Huseynova D.A.¹, Mehdiyev B.G.¹, Mustafaev N.B.¹
Мекемелер:
1. Institute of Physics of the National Academy of Sciences of Azerbaijan
2. Institute of Radiation Problems of the National Academy of Sciences of Azerbaijan
Шығарылым: Том 52, № 7 (2018)
Беттер: 840-842
Бөлім: Electronic Properties of Semiconductors
URL: https://journal-vniispk.ru/1063-7826/article/view/203605
DOI: https://doi.org/10.1134/S1063782618070060
ID: 203605

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

The photothreshold of an α-GeS layered crystal is calculated from first principles based on the functional density method depending on its thickness. Two neighboring crystal plates consisting of several layers are separated by vacuum 4 layers thick, which corresponds to the doublet unit cell size of a bulk crystal. It is shown that the magnitude of the photothreshold is almost invariable with a crystal thickness larger than 10 layers.

Авторлар туралы

Z. Jahangirli

Institute of Physics of the National Academy of Sciences of Azerbaijan; Institute of Radiation Problems of the National Academy of Sciences of Azerbaijan

Хат алмасуға жауапты Автор.
Email: zakircahangirli@yahoo.com
Әзірбайжан, Baku, AZ-1143; Baku, AZ-1143