Microwave Magnetic Absorption in HgSe with Co and Ni Impurities

A. I. Veinger; I. V. Kochman; D. A. Frolov; V. I. Okulov; T. E. Govorkova; L. D. Paranchich

doi:10.1134/S1063782619100233

Microwave Magnetic Absorption in HgSe with Co and Ni Impurities

作者: Veinger A.I.¹, Kochman I.V.¹, Frolov D.A.¹, Okulov V.I.², Govorkova T.E.², Paranchich L.D.³
隶属关系:
1. Ioffe Institute
2. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
3. Chernivtsy National University
期: 卷 53, 编号 10 (2019)
页面: 1375-1380
栏目: Electronic Properties of Semiconductors
URL: https://journal-vniispk.ru/1063-7826/article/view/207231
DOI: https://doi.org/10.1134/S1063782619100233
ID: 207231

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详细

Features of magnetic-field-dependent microwave absorption in HgSe samples doped with Co and Ni impurities in different concentrations are investigated. The electron-spin resonance spectra of weakly coupled Co atoms and peculiarities of the magnetic-absorption variation in a magnetic field passing through the zero value are established. The main parameters of the electron-spin resonance spectra and temperature and angular dependences of microwave absorption in weak fields are determined.