Email this article Surface morphological instability of silicon (100) crystals under microwave ion physical etching
- Authors: Yafarov R.K.1, Shanygin V.Y.1
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Affiliations:
- Saratov Branch, Kotel’nikov Institute of Radio Engineering and Electronics
- Issue: Vol 58, No 2 (2016)
- Pages: 360-363
- Section: Surface Physics and Thin Films
- URL: https://journal-vniispk.ru/1063-7834/article/view/196998
- DOI: https://doi.org/10.1134/S1063783416020347
- ID: 196998
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Abstract
This paper presents the results of studies of the dynamics of relaxation modification of the morphological characteristics of atomically clean surfaces of silicon (100) crystals with different types of conductivity after microwave ion physical etching in an argon atmosphere. For the first time, the effect of the electronic properties on the morphological characteristics and the surface free energy of silicon crystals is experimentally shown and proven by physicochemical methods.
About the authors
R. K. Yafarov
Saratov Branch, Kotel’nikov Institute of Radio Engineering and Electronics
Author for correspondence.
Email: pirpc@yandex.ru
Russian Federation, Zelenaya ul. 38, Saratov, 410019
V. Ya. Shanygin
Saratov Branch, Kotel’nikov Institute of Radio Engineering and Electronics
Email: pirpc@yandex.ru
Russian Federation, Zelenaya ul. 38, Saratov, 410019
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