Effect of bias voltage polarity of a substrate on the texture, microstructure, and magnetic properties of Ni films prepared by magnetron sputtering
- Authors: Dzhumaliev A.S.1,2, Nikulin Y.V.1,2, Filimonov Y.A.1,2,3
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Affiliations:
- Saratov Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics
- Saratov State University named after N.G. Chernyshevsky
- Yuri Gagarin State Technical University of Saratov
- Issue: Vol 58, No 6 (2016)
- Pages: 1247-1256
- Section: Surface Physics and Thin Films
- URL: https://journal-vniispk.ru/1063-7834/article/view/197893
- DOI: https://doi.org/10.1134/S1063783416060135
- ID: 197893
Cite item
Abstract
The influence of the bias voltage polarity Us on microstructure, crystallographic texture and magnetic properties has been investigated for Ni films with a thickness of ≈15–420 nm, which are obtained via magnetron sputtering at a working gas pressure P corresponding to the collision-deficient flight mode of atoms of the sputtered target between the target and the substrate. The Ni(111)-textured films have been shown to form at Us ≈–100 V, whose microstructure and magnetic parameters are almost unchanged with a thickness. In contrast, the Ni(200) films are formed at Us ≈ +100 V, whose magnetic properties and micro-structure depend significantly on the thickness d that manifests in a critical thickness d* ≈ 150 nm, when the structure of the film becomes inhomogeneous in the thickness, the remagnetization loops are changed from rectangular to supercritical with the formation of the band domain structure.
About the authors
A. S. Dzhumaliev
Saratov Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics; Saratov State University named after N.G. Chernyshevsky
Email: yvnikulin@gmail.com
Russian Federation, ul. Zelenaya 38, Saratov, 410019; Astrakhanskaya ul. 83, Saratov, 410012
Yu. V. Nikulin
Saratov Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics; Saratov State University named after N.G. Chernyshevsky
Author for correspondence.
Email: yvnikulin@gmail.com
Russian Federation, ul. Zelenaya 38, Saratov, 410019; Astrakhanskaya ul. 83, Saratov, 410012
Yu. A. Filimonov
Saratov Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics; Saratov State University named after N.G. Chernyshevsky; Yuri Gagarin State Technical University of Saratov
Email: yvnikulin@gmail.com
Russian Federation, ul. Zelenaya 38, Saratov, 410019; Astrakhanskaya ul. 83, Saratov, 410012; Politekhnicheskaya ul. 77, Saratov, 410054
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