Отправить статью по E-mail Transport properties of graphene in the region of its interface with water surface
- Авторы: Butko A.V.1, Butko V.Y.1,2, Lebedev S.P.1,3, Smirnov A.N.1, Davydov V.Y.1, Lebedev A.A.1, Kumzerov Y.A.1
-
Учреждения:
- Ioffe Physical-Technical Institute
- St. Petersburg Academic University—Nanotechnology Research and Education Centre of the Russian Academy of Sciences
- National Research University of Information Technologies, Mechanics, and Optics
- Выпуск: Том 58, № 7 (2016)
- Страницы: 1483-1486
- Раздел: Graphenes
- URL: https://journal-vniispk.ru/1063-7834/article/view/198276
- DOI: https://doi.org/10.1134/S1063783416070106
- ID: 198276
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
The graphene growth by thermal decomposition of silicon carbide at the temperature of ~1400°C in a high vacuum of ~10–6 Torr has been optimized. By Raman spectroscopy, the mean thickness of obtained graphene (2–4 single layers) has been estimated and the presence of high-quality graphene areas in the samples has been demonstrated. It has been found out that the four-point resistance of graphene increases in the region of its interface with water approximately by 25%. For the graphene–water interface in the transistor geometry, with variation in the gate-to-source voltage, the field effect corresponding to the hole type of charge carries in graphene has been revealed.
Об авторах
A. Butko
Ioffe Physical-Technical Institute
Email: vladimirybutko@gmail.com
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
V. Butko
Ioffe Physical-Technical Institute; St. Petersburg Academic University—Nanotechnology Research and Education Centre of the Russian Academy of Sciences
Автор, ответственный за переписку.
Email: vladimirybutko@gmail.com
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021; ul. Khlopina 8/3, St. Petersburg, 194021
S. Lebedev
Ioffe Physical-Technical Institute; National Research University of Information Technologies, Mechanics, and Optics
Email: vladimirybutko@gmail.com
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Kronverkskii pr. 49, St. Petersburg, 197101
A. Smirnov
Ioffe Physical-Technical Institute
Email: vladimirybutko@gmail.com
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
V. Davydov
Ioffe Physical-Technical Institute
Email: vladimirybutko@gmail.com
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
A. Lebedev
Ioffe Physical-Technical Institute
Email: vladimirybutko@gmail.com
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
Yu. Kumzerov
Ioffe Physical-Technical Institute
Email: vladimirybutko@gmail.com
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
Дополнительные файлы
