Email this article Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing
- Authors: Danilov Y.A.1,2,3, Boudinov H.3, Vikhrova O.V.2, Zdoroveyshchev A.V.2, Kudrin A.V.1,2, Pavlov S.A.4, Parafin A.E.1,4, Pitirimova E.A.1, Yakubov R.R.1
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod
- Physico-Technical Research Institute
- Institute of Physics
- Institute for Physics of Microstructures
- Issue: Vol 58, No 11 (2016)
- Pages: 2218-2222
- Section: Magnetism
- URL: https://journal-vniispk.ru/1063-7834/article/view/199060
- DOI: https://doi.org/10.1134/S1063783416110056
- ID: 199060
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Abstract
It is shown that (Ga,Mn)As layers formed by Mn+ ion implantation into GaAs and subsequent annealing by an excimer laser pulse with an energy density to 200–300 mJ/cm2 feature the properties of the p-type semiconductor and ferromagnetic properties. The threshold dose of implanted ions (~1015 cm–2) for activating Mn acceptors is determined. The sheet hole concentration and the Curie temperature increase with further increasing Mn+ ion dose. Hysteresis loops in the magnetic field dependences of the Hall effect, the negative magnetoresistance, and magnetic and structural studies suggest that the layers are analogues of single-phase ferromagnetic compounds (Ga,Mn)As formed by low-temperature molecular beam epitaxy.
About the authors
Yu. A. Danilov
Lobachevsky State University of Nizhny Novgorod; Physico-Technical Research Institute; Institute of Physics
Author for correspondence.
Email: danilov@nifti.unn.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950; pr. Gagarina 23/3, Nizhny Novgorod, 603950; Porto Alegre, 91501-970
H. Boudinov
Institute of Physics
Email: danilov@nifti.unn.ru
Brazil, Porto Alegre, 91501-970
O. V. Vikhrova
Physico-Technical Research Institute
Email: danilov@nifti.unn.ru
Russian Federation, pr. Gagarina 23/3, Nizhny Novgorod, 603950
A. V. Zdoroveyshchev
Physico-Technical Research Institute
Email: danilov@nifti.unn.ru
Russian Federation, pr. Gagarina 23/3, Nizhny Novgorod, 603950
A. V. Kudrin
Lobachevsky State University of Nizhny Novgorod; Physico-Technical Research Institute
Email: danilov@nifti.unn.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950; pr. Gagarina 23/3, Nizhny Novgorod, 603950
S. A. Pavlov
Institute for Physics of Microstructures
Email: danilov@nifti.unn.ru
Russian Federation, GSP-105, Nizhny Novgorod, 603950
A. E. Parafin
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures
Email: danilov@nifti.unn.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950; GSP-105, Nizhny Novgorod, 603950
E. A. Pitirimova
Lobachevsky State University of Nizhny Novgorod
Email: danilov@nifti.unn.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950
R. R. Yakubov
Lobachevsky State University of Nizhny Novgorod
Email: danilov@nifti.unn.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950
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