Email this article Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/n+-GaAs/(Ga,Mn)As
- Authors: Malysheva E.I.1, Dorokhin M.V.1, Zdoroveyshchev A.V.1, Ved’ M.V.2
-
Affiliations:
- Physical Technical Research Institute
- Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 58, No 11 (2016)
- Pages: 2271-2276
- Section: Surface Physics and Thin Films
- URL: https://journal-vniispk.ru/1063-7834/article/view/199127
- DOI: https://doi.org/10.1134/S1063783416110238
- ID: 199127
Cite item
Open Access
Access granted
Subscription Access
Abstract
The spin light-emitting diodes based on InGaAs/GaAs heterostructures with a quantum well and an injector in the form of a (Ga,Mn)As ferromagnetic layer have been studied. It has been demonstrated that the efficiency of electron spin injection in the structure with a (Ga,Mn)As/n+-GaAs tunneling barrier can be controlled by varying the parameters of n+-GaAs. The spin injection control mechanisms associated with the thermal activation and tunneling of carriers have been discussed.
About the authors
E. I. Malysheva
Physical Technical Research Institute
Author for correspondence.
Email: malysheva@phys.unn.ru
Russian Federation, pr. Gagarina 23/3, Nizhny Novgorod, 603950
M. V. Dorokhin
Physical Technical Research Institute
Email: malysheva@phys.unn.ru
Russian Federation, pr. Gagarina 23/3, Nizhny Novgorod, 603950
A. V. Zdoroveyshchev
Physical Technical Research Institute
Email: malysheva@phys.unn.ru
Russian Federation, pr. Gagarina 23/3, Nizhny Novgorod, 603950
M. V. Ved’
Lobachevsky State University of Nizhny Novgorod
Email: malysheva@phys.unn.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950
Supplementary files
