Elastically strained and relaxed La0.67Ca0.33MnO3 films grown on lanthanum aluminate substrates with different orientations
- Autores: Boikov Y.A.1, Serenkov I.T.1, Sakharov V.I.1, Claeson T.2
- 
							Afiliações: 
							- Ioffe Institute
- Chalmers University of Technology
 
- Edição: Volume 58, Nº 12 (2016)
- Páginas: 2560-2566
- Seção: Surface Physics and Thin Films
- URL: https://journal-vniispk.ru/1063-7834/article/view/199401
- DOI: https://doi.org/10.1134/S1063783416120039
- ID: 199401
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Resumo
Structure of 40-nm thick La0.67Ca0.33MnO3 (LCMO) films grown by laser evaporation on (001) and (110) LaAlO3 (LAO) substrates has been investigated using the methods of medium-energy ion scattering and X-ray diffraction. The grown manganite layers are under lateral biaxial compressive mechanical stresses. When (110)LAO wafers are used as the substrates, stresses relax to a great extent; the relaxation is accompanied by the formation of defects in a (3–4)-nm thick manganite-film interlayer adjacent to the LCMO–(110)LAO interface. When studying the structure of the grown layers, their electro- and magnetotransport parameters have been measured. The electroresistance of the LCMO films grown on the substrates of both types reached a maximum at temperature TM of about 250 K. At temperatures close to TM magnetoresistance of the LCMO/(110)LAO films exceeds that of the LCMO/(001)LAO films by 20–30%; however, the situation is inverse at low temperatures (T < 150 K). At T < TM, the magnetotransport in the grown manganite films significantly depends on the spin ordering in ferromagnetic domains, which increase with a decrease in temperature.
Sobre autores
Yu. Boikov
Ioffe Institute
							Autor responsável pela correspondência
							Email: Yu.Boikov@mail.ioffe.ru
				                					                																			                												                	Rússia, 							St. Petersburg, 194021						
I. Serenkov
Ioffe Institute
														Email: Yu.Boikov@mail.ioffe.ru
				                					                																			                												                	Rússia, 							St. Petersburg, 194021						
V. Sakharov
Ioffe Institute
														Email: Yu.Boikov@mail.ioffe.ru
				                					                																			                												                	Rússia, 							St. Petersburg, 194021						
T. Claeson
Chalmers University of Technology
														Email: Yu.Boikov@mail.ioffe.ru
				                					                																			                												                	Suécia, 							Gothenburg						
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