Effect of a Coulomb well in (In, Ga)As/GaAs quantum wells
- Authors: Seisyan R.P.1, Kavokin A.V.2,3,4, Moumanis K.5, Sasin M.E.1
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Affiliations:
- Ioffe Institute
- University of Southampton
- CNR-SPIN
- Saint Petersburg State University
- Université de Sherbrooke
- Issue: Vol 59, No 6 (2017)
- Pages: 1154-1170
- Section: Optical Properties
- URL: https://journal-vniispk.ru/1063-7834/article/view/200340
- DOI: https://doi.org/10.1134/S1063783417060245
- ID: 200340
Cite item
Abstract
Magnetooptical investigation of exciton transitions in high-quality quantum wells of an (In, Ga)As/GaAs heterosystem has been carried out. Investigation of transmission of free-hanging samples detached from the substrate in the magnetic fields of up to 12 T revealed a rich fine structure associated with various heavy-hole and light-hole exciton transitions. In particular, transitions from the excited states of light holes localized in a Coulomb potential produced by an electron along the heterojunction axis (a Coulomb well) have been detected. Taking into account consistently stresses, formation of Landau levels, the binding energies of excitons (diamagnetic excitons), and the effect of a Coulomb well, we have succeeded to describe the experimental results with the use of a self-consistent variational procedure. As a result, new features in the structure of optical transitions have been explained and the effective masses of electrons and holes of excitons formed by both heavy and light holes have been determined with a high accuracy.
About the authors
R. P. Seisyan
Ioffe Institute
Author for correspondence.
Email: rseis@ffm.ioffe.ru
Russian Federation, St. Petersburg
A. V. Kavokin
University of Southampton; CNR-SPIN; Saint Petersburg State University
Email: rseis@ffm.ioffe.ru
United Kingdom, Southampton; Viale del Politecnico 1, Rome, I-00133; St. Petersburg
Kh. Moumanis
Université de Sherbrooke
Email: rseis@ffm.ioffe.ru
Canada, Sherbrooke
M. E. Sasin
Ioffe Institute
Email: rseis@ffm.ioffe.ru
Russian Federation, St. Petersburg
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