Modification of the electronic structure of graphene by intercalation of iron and silicon atoms
- Authors: Pronin I.I.1,2, Dunaevskii S.M.3,4, Lobanova E.Y.1,3, Mikhailenko E.K.1,3
- 
							Affiliations: 
							- Ioffe Institute
- National Research University of Information Technologies, Mechanics, and Optics
- Peter the Great St. Petersburg Polytechnic University
- National Research Center “Kurchatov Institute,” Konstantinov Nuclear Physics Institute, Petersburg, Gatchina
 
- Issue: Vol 59, No 10 (2017)
- Pages: 2063-2069
- Section: Surface Physics, Thin Films
- URL: https://journal-vniispk.ru/1063-7834/article/view/201317
- DOI: https://doi.org/10.1134/S1063783417100298
- ID: 201317
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Abstract
The ab initio calculations of the electronic structure of low-dimensional graphene–iron–nickel and graphene–silicon–iron systems were carried out using the density functional theory. For the graphene–Fe–Ni(111) system, band structures for different spin projections and total densities of valence electrons are determined. The energy position of the Dirac cone caused by the pz states of graphene depends weakly on the number of iron layers intercalated into the interlayer gap between nickel and graphene. For the graphene–Si–Fe(111) system, the most advantageous positions of silicon atoms on iron are determined. The intercalation of silicon under graphene leads to a sharp decrease in the interaction of carbon atoms with the substrate and largely restores the electronic properties of free graphene.
About the authors
I. I. Pronin
Ioffe Institute; National Research University of Information Technologies, Mechanics, and Optics
							Author for correspondence.
							Email: Igor.Pronin@mail.ioffe.ru
				                					                																			                												                	Russian Federation, 							St. Petersburg, 194021; St. Petersburg, 197101						
S. M. Dunaevskii
Peter the Great St. Petersburg Polytechnic University; National Research Center “Kurchatov Institute,” Konstantinov Nuclear Physics Institute, Petersburg, Gatchina
														Email: Igor.Pronin@mail.ioffe.ru
				                					                																			                												                	Russian Federation, 							St. Petersburg, 195251; Leningrad oblast, 188300						
E. Yu. Lobanova
Ioffe Institute; Peter the Great St. Petersburg Polytechnic University
														Email: Igor.Pronin@mail.ioffe.ru
				                					                																			                												                	Russian Federation, 							St. Petersburg, 194021; St. Petersburg, 195251						
E. K. Mikhailenko
Ioffe Institute; Peter the Great St. Petersburg Polytechnic University
														Email: Igor.Pronin@mail.ioffe.ru
				                					                																			                												                	Russian Federation, 							St. Petersburg, 194021; St. Petersburg, 195251						
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