Effect of the stresses caused by substrate on the electrical conductivity of ferromagnetic manganite lanthanum–barium films


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Abstract

This is a complex study of the electrophysical and magnetic characteristics of epitaxial manganite La0.7Ba0.3MnO3 (LBMO) films under conditions of crystal structure stresses caused by misfit in the lattice parameters of the LBMO crystal and a substrate. The substrate used had the lattice parameter smaller than that in the LBMO crystal. It is shown that the temperature dependence of the electrical resistance of the films at low temperatures is not dependent on the existence of stresses in the film and agrees well with the calculation with allowance made for the interaction of carriers with magnetic excitations in the presence of strongly correlated electronic states. The study of the ferromagnetic resonance line indicates an inhomogeneity of the ferromagnetic phase in the LBMO films and the increase in the ferromagnetic resonance line width with decreasing temperature.

About the authors

G. A. Ovsyannikov

Institute of Radio Engineering and Electronics

Author for correspondence.
Email: gena@hitech.cplire.ru
Russian Federation, ul. Mokhovaya 11, Moscow, 125009

T. A. Shaikhulov

Institute of Radio Engineering and Electronics

Email: gena@hitech.cplire.ru
Russian Federation, ul. Mokhovaya 11, Moscow, 125009

V. A. Shakhunov

Institute of Radio Engineering and Electronics

Email: gena@hitech.cplire.ru
Russian Federation, ul. Mokhovaya 11, Moscow, 125009

V. V. Demidov

Institute of Radio Engineering and Electronics

Email: gena@hitech.cplire.ru
Russian Federation, ul. Mokhovaya 11, Moscow, 125009

N. V. Andreev

National University for Science and Technology MISiS

Email: gena@hitech.cplire.ru
Russian Federation, Leninskii pr. 4, Moscow, 119936

A. E. Pestun

National University for Science and Technology MISiS

Email: gena@hitech.cplire.ru
Russian Federation, Leninskii pr. 4, Moscow, 119936

V. L. Preobrazhenskii

Wave Research Center of the Prokhorov General Physics Institute

Email: gena@hitech.cplire.ru
Russian Federation, ul. Vavilova 38, Moscow, 117942

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