Photoconductive detector of circularly polarized radiation based on a MIS structure with a CoPt layer

Abstract

A photoconductive detector of circularly polarized radiation based on the metal–insulator–semiconductor structure of CoPt/(Al₂O₃/SiO₂/Al₂O₃)/InGaAs/GaAs is created. The efficiency of detection of circularly polarized radiation is 0.75% at room temperature. The operation of the detector is based on the manifestation of the effect of magnetic circular dichroism in the CoPt layer, that is, the dependence of the CoPt transmission coefficient on the sign of the circular polarization of light and magnetization.