New luminescence lines in nanodiamonds obtained by chemical vapor deposition


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Abstract

The spectral characteristics of the photoluminescence lines detected for nanodiamonds obtained by the reactive ion etching of diamond particles in oxygen plasma, deposited by chemical vapor deposition on a silicon substrate, are studied. At room temperature, narrow lines are observed in the visible and infrared spectral regions, with a full width at half-maximum in the range of 1–2 nm at an almost complete absence of a broadband photoluminescence background signal. At decreasing temperature, the lines narrowed to 0.2–0.6 nm at T = 79 K, and the minimum line width was 0.055 nm at T = 10 K. With increasing temperature, the narrow lines shifted to the long-wavelength region of the spectrum, and their intensity decreased.

About the authors

V. G. Golubev

Ioffe Institute

Email: grudink.gvg@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

S. A. Grudinkin

Ioffe Institute; National Research University of Information Technologies

Author for correspondence.
Email: grudink.gvg@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101

V. Yu. Davydov

Ioffe Institute

Email: grudink.gvg@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

A. N. Smirnov

Ioffe Institute

Email: grudink.gvg@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

N. A. Feoktistov

Ioffe Institute

Email: grudink.gvg@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

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