Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH3NH3PbBr3 films

Abstract

Field-effect transistor (FET) structures based on soluble organometallic perovskites, CH₃NH₃PbBr₃, were obtained and their electrical properties were studied. FETs made of CH₃NH₃PbBr₃ films possess current- voltage characteristics (IVs) typical for ambipolar FETs with saturation regime. The transfer characteristics of FETs based on CH₃NH₃PbBr₃ have an insignificant hysteresis and slightly depend on voltage at the source-drain. Mobilities of charge carriers (holes) calculated from IVs of FETs based on CH₃NH₃PbBr₃ at 300 K in saturation and weak field regimes were ~5 and ~2 cm²/V s, respectively, whereas electron mobility is ~3 cm²/V s, which exceeds the mobility value ~1 cm²/V s obtained earlier for FETs based on CH₃NH₃PbI₃.