Excitons in ZnO Quantum Wells
- Авторлар: Bataev M.N.1, Filosofov N.G.1, Serov A.Y.1, Agekyan V.F.1, Morhain C.2, Kochereshko V.P.1,3
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Мекемелер:
- St. Petersburg State University
- Centre de Recherche sur I’Hetero-Epitaxie et ses Applications-CNRS
- Ioffe Institute
- Шығарылым: Том 60, № 12 (2018)
- Беттер: 2628-2633
- Бөлім: Low-Dimensional Systems
- URL: https://journal-vniispk.ru/1063-7834/article/view/204645
- DOI: https://doi.org/10.1134/S1063783418120077
- ID: 204645
Дәйексөз келтіру
Аннотация
Reflectance and photoluminescence spectra of the ZnO/Zn0.78Mg0.22O structures with ZnO quantum wells and thick ZnO and Zn0.78Mg0.22O layers have been thoroughly investigated at different temperatures and excitation intensities and wavelengths. All the observed spectral lines have been identified. It has been established that the built-in electric field does not affect the spectrum as strongly as was expected. The built-in field is apparently effectively screened by the carriers that have migrated to the bands from donor and acceptor levels. The parameters determining the exciton properties in zinc oxide have been estimated.
Авторлар туралы
M. Bataev
St. Petersburg State University
Email: Vladimir.Kochereshko@mail.ioffe.ru
Ресей, St. Petersburg, 199034
N. Filosofov
St. Petersburg State University
Email: Vladimir.Kochereshko@mail.ioffe.ru
Ресей, St. Petersburg, 199034
A. Serov
St. Petersburg State University
Email: Vladimir.Kochereshko@mail.ioffe.ru
Ресей, St. Petersburg, 199034
V. Agekyan
St. Petersburg State University
Email: Vladimir.Kochereshko@mail.ioffe.ru
Ресей, St. Petersburg, 199034
C. Morhain
Centre de Recherche sur I’Hetero-Epitaxie et ses Applications-CNRS
Email: Vladimir.Kochereshko@mail.ioffe.ru
Франция, Valbonne, F-06560
V. Kochereshko
St. Petersburg State University; Ioffe Institute
Хат алмасуға жауапты Автор.
Email: Vladimir.Kochereshko@mail.ioffe.ru
Ресей, St. Petersburg, 199034; St. Petersburg, 194021
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