Email this article Entrainment of Electrons in a Semiconductor Nanostructure by a Flow of Neutral Particles
- Authors: Gantsevich S.V.1, Gurevich V.L.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 60, No 12 (2018)
- Pages: 2645-2648
- Section: Low-Dimensional Systems
- URL: https://journal-vniispk.ru/1063-7834/article/view/204674
- DOI: https://doi.org/10.1134/S1063783419010086
- ID: 204674
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Abstract
The entrainment of current carriers (electrons) in a two-dimensional semiconductor nanostructure by a flow of neutral particles (atoms or molecules) moving near its surface is considered. It is shown that the physical mechanism is similar to the entrainment of electrons with an ion beam inquantum wires, considered earlier in the works of V.L. Gurevich and M.I. Muradov.
About the authors
S. V. Gantsevich
Ioffe Institute
Author for correspondence.
Email: sergei.elur@mail.ioffe.ru
Russian Federation, St. Petersburg
V. L. Gurevich
Ioffe Institute
Email: sergei.elur@mail.ioffe.ru
Russian Federation, St. Petersburg
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