Origin of the Concentration Quenching of Luminescence in Zn 2 SiO 4 :Mn Phosphors

T. A. Onufrieva; T. I. Krasnenko; N. A. Zaitseva; I. V. Baklanova; M. V. Rotermel’; I. V. Ivanova; I. D. Popov; R. F. Samigullina

doi:10.1134/S1063783419050238

Origin of the Concentration Quenching of Luminescence in Zn₂SiO₄:Mn Phosphors

Authors: Onufrieva T.A.¹, Krasnenko T.I.¹, Zaitseva N.A.¹^,2, Baklanova I.V.¹, Rotermel’ M.V.¹, Ivanova I.V.¹, Popov I.D.¹, Samigullina R.F.¹
Affiliations:
1. Institute of Solid State Chemistry, Ural Branch, Russian Academy of Sciences
2. Ural State Mining University
Issue: Vol 61, No 5 (2019)
Pages: 806-810
Section: Impurity Centers
URL: https://journal-vniispk.ru/1063-7834/article/view/205428
DOI: https://doi.org/10.1134/S1063783419050238
ID: 205428

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Abstract

The analysis of the unified series of single-phase Zn_2 – 2xMn_2xSiO₄ samples (x ≤ 0.2) has provided the possibility to determine the optimal dopant concentration x = 0.13 for the maximum luminescence intensity. It has been established that the dominating mechanism of concentration luminescence quenching and excitation energy dissipation is the oxidation of some Mn²⁺ activating ions and the growth of defectness in the luminophore due to this process Phosphors.