Dynamics of Spatially Inhomogeneous Spin Polarization of Nonequilibrium Conduction Electrons in Magnetic Transitions
- Authors: Vilkov E.A.1, Mikhailov G.M.2, Nikitov S.A.1, Safin A.R.3, Logunov M.V.1, Korenivskii V.N.4, Chigarev S.G.1, Fomin L.A.2
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Affiliations:
- Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
- Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
- National Research University Moscow Power Engineering Institute
- Royal Institute of Technology
- Issue: Vol 61, No 6 (2019)
- Pages: 941-951
- Section: Metals
- URL: https://journal-vniispk.ru/1063-7834/article/view/205670
- DOI: https://doi.org/10.1134/S1063783419060283
- ID: 205670
Cite item
Abstract
The equation of the dynamics of the magnetic moment motion that has been averaged over the ensemble of nonequilibrium spin-injected electrons in a ferromagnetic transition in the presence of exchange interaction, interaction with an external electromagnetic field, and a thermostat has been obtained taking into account the spatial inhomogeneity of the charge carrier distribution. It has been shown that taking into account the spatial inhomogeneity of the charge carrier distribution in the equation of the dynamics of the magnetic moment motion allows for describing the various processes of electron transfer in the magnetic transition. The probability of quantum transitions of electrons with opposite spin directions, which determine spin relaxation in interaction with a thermostat, has been estimated. It has been shown that the anisotropy of the radiation medium is determined not only by the anisotropy of the sd-exchange tensor, but also by the additional anisotropy that is caused by the electron impulse derivatives of this tensor. The considered phenomena have a great potential for the detection of new effects and development of new devices based on them, including compact tunable radiation sources in the terahertz frequency range, which is obviously difficult to generate.
About the authors
E. A. Vilkov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Author for correspondence.
Email: e-vilkov@yandex.ru
Russian Federation, Moscow
G. M. Mikhailov
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
Email: e-vilkov@yandex.ru
Russian Federation, Chernogolovka
S. A. Nikitov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: e-vilkov@yandex.ru
Russian Federation, Moscow
A. R. Safin
National Research University Moscow Power Engineering Institute
Email: e-vilkov@yandex.ru
Russian Federation, Moscow
M. V. Logunov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: e-vilkov@yandex.ru
Russian Federation, Moscow
V. N. Korenivskii
Royal Institute of Technology
Email: e-vilkov@yandex.ru
Sweden, Stockholm
S. G. Chigarev
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: e-vilkov@yandex.ru
Russian Federation, Moscow
L. A. Fomin
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
Email: e-vilkov@yandex.ru
Russian Federation, Chernogolovka
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