Carbon Nanostructures on a Semiconductor Substrate

Abstract

The analytical expressions for the density of states and the occupation numbers are obtained for simple models of carbon nanostructures (graphene–boron nitride lateral heterostructure, decorated zigzag edges of semi-infinity graphene and graphene nanoribbons, and decorated carbyne). The main attention is placed to the strong-coupling regime of the nanostructures with a semiconducting substrate. The numerical estimations are given for the SiC substrate.