Localization of the Wannier–Mott Exciton on a Langmuir-Film/CdS Organic Semiconductor Interface
- 作者: Korolkova K.A.1, Novak V.R.2, Sel’kin A.V.1,3
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隶属关系:
- Ioffe Institute
- NT-MDT Spectrum Instruments Ltd.
- St. Petersburg State University
- 期: 卷 61, 编号 7 (2019)
- 页面: 1304-1309
- 栏目: Surface Physics and Thin Films
- URL: https://journal-vniispk.ru/1063-7834/article/view/205953
- DOI: https://doi.org/10.1134/S1063783419070175
- ID: 205953
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详细
The low-temperature (T = 2 K) light reflectance spectra of organic semiconductor structures produced by depositing Langmuir–Blodgett films on a cadmium sulfide (CdS) crystal surface are studied. The spectra were studied in the region of the resonant frequency of the exciton state An = 1 in CdS. The spectra were analyzed within a multilayer medium model with allowance for the spatial dispersion and an exciton-free “dead” layer near the crystal surface contacting with the film. A conclusion is made that, as a result of the deposition of an organic film on a semiconductor crystal surface, the Wanier–Mott exciton is spatially localized near the film–crystal interface.
作者简介
K. Korolkova
Ioffe Institute
编辑信件的主要联系方式.
Email: ksenia.korolikova@gmail.com
俄罗斯联邦, St. Petersburg, 194021
V. Novak
NT-MDT Spectrum Instruments Ltd.
Email: ksenia.korolikova@gmail.com
俄罗斯联邦, Moscow, 124460
A. Sel’kin
Ioffe Institute; St. Petersburg State University
Email: ksenia.korolikova@gmail.com
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 199034
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