Cobalt Intercalation of Graphene on Silicon Carbide

Abstract

In this paper, we studied cobalt intercalation of single-layer graphene grown on the 4H-SiC(0001) polytype. The experiments were carried out in situ under ultrahigh vacuum conditions by high energy resolution photoelectron spectroscopy using synchrotron radiation and low energy electron diffraction. The nominal thicknesses of the deposited cobalt layers varied in the range of 0.2–5 nm, while the sample temperature was varied from room temperature to 800°C. Unlike Fe films, the annealing of Co films deposited on graphene at room temperature is shown to not intercalate graphene by cobalt. The formation of the graphene–cobalt–SiC intercalation system was detected upon deposition of Co atoms on samples heated to temperatures of above ~400°C. Cobalt films with a thickness up to 2 nm under graphene are formed using this method, and they are shown to be magnetized along the surface at thicknesses of greater than 1.3 nm. Graphene intercalation by cobalt was found to be accompanied by the chemical interaction of Co atoms with silicon carbide leading to the synthesis of cobalt silicides. At temperatures of above 500°C, the growth of cobalt films under graphene is limited by the diffusion of Co atoms into the bulk of silicon carbide.