Simulation of Wetting Phase Transitions in Thin Films
- Авторлар: L’vov P.E.1,2, Svetukhin V.V.3, Bulyarskii S.V.2, Pavlov A.A.2
-
Мекемелер:
- Ulyanovsk State University
- Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences
- Scientific and Production Company Technological Center,
- Шығарылым: Том 61, № 10 (2019)
- Беттер: 1872-1881
- Бөлім: Phase Transitions
- URL: https://journal-vniispk.ru/1063-7834/article/view/206345
- DOI: https://doi.org/10.1134/S1063783419100238
- ID: 206345
Дәйексөз келтіру
Аннотация
Based on the hydrodynamic model, the kinetics of wetting phase transitions in nanoscale liquid films on the substrate surface is analyzed. In the range of metastable states, the features of the formation of equilibrium clusters are studied and corresponding film thickness distributions are calculated. In the range of unstable states, the kinetics of the phase transition resulting in cluster formation is analyzed. In the early stage, regions shaped as holes with a film thickness close to the equilibrium one are formed. Hole coalescence leads to a film material redistribution followed by clustering. For this process, the kinetics of the average hole size and concentration is calculated. For formed clusters, the kinetics of the average radius, average height, concentration, and their radius and height distribution function are studied.
Негізгі сөздер
Авторлар туралы
P. L’vov
Ulyanovsk State University; Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: LvovPE@sv.uven.ru
Ресей, Ulyanovsk, 432000; Moscow, 119991
V. Svetukhin
Scientific and Production Company Technological Center,
Email: LvovPE@sv.uven.ru
Ресей, Zelenograd, Moscow, 124498
S. Bulyarskii
Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences
Email: LvovPE@sv.uven.ru
Ресей, Moscow, 119991
A. Pavlov
Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences
Email: LvovPE@sv.uven.ru
Ресей, Moscow, 119991
Қосымша файлдар
