Electron Diffraction Study of Epitaxial Graphene Structure Grown upon SiC (0001) Thermal Destruction in Ar Atmosphere and in High Vacuum


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Abstract

We have studied the structure of epitaxial graphene obtained as a result of thermal desorption of the silicon carbide surface under conditions of vacuum synthesis and in Ar medium by reflection electron diffraction. As a result of the study, a significantly more uniform buffer layer coating of the SiC surface by epitaxial graphene has been found when forming in inert medium on the surface of 4H- and 6H-SiC(0001) polytypes compared with the synthesis of graphene in high vacuum. The quality of the coating has been shown to depend on the degree of perfection of the original single crystal.

About the authors

I. S. Kotousova

Ioffe Institute

Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

S. P. Lebedev

Ioffe Institute

Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

A. A. Lebedev

Ioffe Institute; St. Petersburg Electrotechnical University

Author for correspondence.
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376

P. V. Bulat

National Research University of Information Technologies, Mechanics and Optics

Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101

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