Electron Diffraction Study of Epitaxial Graphene Structure Grown upon SiC (0001) Thermal Destruction in Ar Atmosphere and in High Vacuum
- Authors: Kotousova I.S.1, Lebedev S.P.1, Lebedev A.A.1,2, Bulat P.V.3
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Affiliations:
- Ioffe Institute
- St. Petersburg Electrotechnical University
- National Research University of Information Technologies, Mechanics and Optics
- Issue: Vol 61, No 10 (2019)
- Pages: 1940-1946
- Section: Graphene
- URL: https://journal-vniispk.ru/1063-7834/article/view/206425
- DOI: https://doi.org/10.1134/S1063783419100226
- ID: 206425
Cite item
Abstract
We have studied the structure of epitaxial graphene obtained as a result of thermal desorption of the silicon carbide surface under conditions of vacuum synthesis and in Ar medium by reflection electron diffraction. As a result of the study, a significantly more uniform buffer layer coating of the SiC surface by epitaxial graphene has been found when forming in inert medium on the surface of 4H- and 6H-SiC(0001) polytypes compared with the synthesis of graphene in high vacuum. The quality of the coating has been shown to depend on the degree of perfection of the original single crystal.
About the authors
I. S. Kotousova
Ioffe Institute
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. P. Lebedev
Ioffe Institute
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Lebedev
Ioffe Institute; St. Petersburg Electrotechnical University
Author for correspondence.
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
P. V. Bulat
National Research University of Information Technologies, Mechanics and Optics
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
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