Electron Diffraction Study of Epitaxial Graphene Structure Grown upon SiC (0001) Thermal Destruction in Ar Atmosphere and in High Vacuum
- Autores: Kotousova I.S.1, Lebedev S.P.1, Lebedev A.A.1,2, Bulat P.V.3
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Afiliações:
- Ioffe Institute
- St. Petersburg Electrotechnical University
- National Research University of Information Technologies, Mechanics and Optics
- Edição: Volume 61, Nº 10 (2019)
- Páginas: 1940-1946
- Seção: Graphene
- URL: https://journal-vniispk.ru/1063-7834/article/view/206425
- DOI: https://doi.org/10.1134/S1063783419100226
- ID: 206425
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Resumo
We have studied the structure of epitaxial graphene obtained as a result of thermal desorption of the silicon carbide surface under conditions of vacuum synthesis and in Ar medium by reflection electron diffraction. As a result of the study, a significantly more uniform buffer layer coating of the SiC surface by epitaxial graphene has been found when forming in inert medium on the surface of 4H- and 6H-SiC(0001) polytypes compared with the synthesis of graphene in high vacuum. The quality of the coating has been shown to depend on the degree of perfection of the original single crystal.
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Sobre autores
I. Kotousova
Ioffe Institute
Email: shura.lebe@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Lebedev
Ioffe Institute
Email: shura.lebe@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Lebedev
Ioffe Institute; St. Petersburg Electrotechnical University
Autor responsável pela correspondência
Email: shura.lebe@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197376
P. Bulat
National Research University of Information Technologies, Mechanics and Optics
Email: shura.lebe@mail.ioffe.ru
Rússia, St. Petersburg, 197101
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