Email this article Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films
- Authors: Sergeeva O.N.1,2, Solnyshkin A.V.1,2, Kiselev D.A.2,3, Il’ina T.S.3, Kukushkin S.A.2,4, Sharofidinov S.S.2,5, Kaptelov E.Y.2,5, Pronin I.P.2,5
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Affiliations:
- Tver’ State University
- Herzen State Pedagogical University of Russia
- National University of Science and Technology MISiS
- Institute for Problems in Mechanical Engineering, Russian Academy of Sciences
- Ioffe Institute
- Issue: Vol 61, No 12 (2019)
- Pages: 2386-2391
- Section: Ferroelectricity
- URL: https://journal-vniispk.ru/1063-7834/article/view/206983
- DOI: https://doi.org/10.1134/S1063783419120485
- ID: 206983
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Abstract
Dielectric and polar properties of aluminum nitride (AlN) thin films epitaxially grown on differently oriented silicon substrates with the p-type conduction and a buffer silicon carbide (SiC) layer and on vicinal planes are investigated. The results of studies of the polar properties by two independent methods—the dynamic pyroelectric effect and the piezoresponse force microscopy—show that the SiC buffer layer application considerably improves polar properties of the aluminum nitride thin layer.
About the authors
O. N. Sergeeva
Tver’ State University; Herzen State Pedagogical University of Russia
Author for correspondence.
Email: o_n_sergeeva@mail.ru
Russian Federation, Tver’, 170026; St. Petersburg, 191186
A. V. Solnyshkin
Tver’ State University; Herzen State Pedagogical University of Russia
Email: o_n_sergeeva@mail.ru
Russian Federation, Tver’, 170026; St. Petersburg, 191186
D. A. Kiselev
Herzen State Pedagogical University of Russia; National University of Science and Technology MISiS
Email: o_n_sergeeva@mail.ru
Russian Federation, St. Petersburg, 191186; Moscow, 119049
T. S. Il’ina
National University of Science and Technology MISiS
Email: o_n_sergeeva@mail.ru
Russian Federation, Moscow, 119049
S. A. Kukushkin
Herzen State Pedagogical University of Russia; Institute for Problems in Mechanical Engineering, Russian Academy of Sciences
Email: o_n_sergeeva@mail.ru
Russian Federation, St. Petersburg, 191186; St. Petersburg, 199178
Sh. Sh. Sharofidinov
Herzen State Pedagogical University of Russia; Ioffe Institute
Email: o_n_sergeeva@mail.ru
Russian Federation, St. Petersburg, 191186; St. Petersburg, 194021
E. Yu. Kaptelov
Herzen State Pedagogical University of Russia; Ioffe Institute
Email: o_n_sergeeva@mail.ru
Russian Federation, St. Petersburg, 191186; St. Petersburg, 194021
I. P. Pronin
Herzen State Pedagogical University of Russia; Ioffe Institute
Email: o_n_sergeeva@mail.ru
Russian Federation, St. Petersburg, 191186; St. Petersburg, 194021
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