


Vol 61, No 3 (2019)
- Year: 2019
- Articles: 33
- URL: https://journal-vniispk.ru/1063-7834/issue/view/12740
Semiconductors
Electrochemical “Resonance” of Photoluminescence for Porous Silicon Formed Using Pulsed Current Anodization
Abstract
Porous silicon is formed using pulsed current with a pulse modulation varied in a range spanning five orders of magnitude, starting from a hundredth of a second, in order to achieve modulation of the properties of PS on the nanoscale. The PS is characterized by performing photoluminescence (PL), paramagnetic, and charge transport measurements. We find that the properties of prepared PS are greatly affected by the modulation period applied and depend on it in a nonmonotonic way. The intensity of orange-red PL exhibits a resonance-like behavior reaching a maximum at the modulation period in the range of 0.1–0.25 s. A correlation between the variation in PL intensity and the electron paramagnetic resonance signal is noticed. We show that PS with a porosity of 50% and a distance between pores of 10 nm is mainly consists of air and silicon oxide. In the prepared PS, the silicon, in the form of granules with a diameter of ≈1.5 nm arranged in chainlets, has a volume fraction on the order of 1%.



Microscopic Description of the Mechanism of Transition between the 2H and 4H Polytypes of Silicon Carbide
Abstract
The mechanism of displacement of one close-packed SiC layer from one minimum position to another on the example of SiC polytype transition 2H → 4H has been studied by ab initio methods. It has been shown that the intermediate state with monoclinic symmetry Cm greatly facilitates this displacement breaking it into two stages. Initially, the Si atom chiefly moves, only then—mainly the C atom. In this case, the Si–C bond is significantly tilted in comparison with the initial position, which allows the reducing of the compression of the SiC bonds in the (\(11\bar {2}0\)) plane. Two transition states of this process, which also possess the Cm symmetry, have been computed. It has been found that the height of the activation barrier of the process of moving the close-packed layer of SiC from one position to another is equal to 1.8 eV. The energy profile of this movement has been calculated.



Effect of Phonon Focusing on the Thermal Conductivity of GaAs/AlGaAs Heterostructures at Low Temperatures
Abstract
The effect of the anisotropy of elastic properties on the thermal conductivity of GaAs/AlGaAs heterostructures at low temperatures is investigated. The effect of phonon focusing on the anisotropy of the thermal conductivity is analyzed. The parameters of the specular reflection of phonons from the boundaries of the heterostructures, which characterize the heat flux in the Knudsen mode of the phonon gas flow, are determined. The angular dependences of the mean free paths of phonons of different polarizations, which determine the thermal conductivity anisotropy of heterostructures with orientations {100} and {110}, are calculated.



Studying Evolution of the Ensemble of Micropores in a SiC/Si Structure during Its Growth by the Method of Atom Substitution
Abstract
The time evolution of the ensemble of micropores formed in the near-surface region of silicon during the growth of thin films of silicon carbide is studied by the method of atom substitution. SiC/Si samples are studied by scanning electron microscopy, ellipsometry, and confocal Raman microscopy. The formation of the porous layer involves several characteristic stages: the emergence of single pores, their growth with the formation of dendrite-like structures, and subsequent coalescence into a continuous layer. It is shown that the thickness of the porous layer at the initial stages of the growth is proportional to the cubic root of time. The possible mechanisms of pore formation are discussed and a theoretical model is proposed to describe the dependence of the average thickness of the porous layer on time. The model is in a good qualitative agreement with the experimental results.



Dielectrics
Luminescence Properties of Undoped Langasite Crystals
Abstract
The optical and luminescence properties of La3Ga5SiO14 lanthanum–gallium silicate crystals grown in atmospheres of argon and argon with the addition of oxygen are investigated. The results of calculations of the structure of energy bands are presented, obtained using the CASTEP module in the framework of the generalized gradient approximation and the local density approximation. The width of the optical band gap of the crystal is determined to be \(E_{g}^{{{\text{opt}}}}\) = 5.1 eV. Upon interband excitation, La3Ga5SiO14 crystals grown in argon atmosphere show a luminescence band with a maximum at 430 nm, whereas for a crystal grown in argon with addition of oxygen, two luminescence bands with maxima at 470 and 530 nm dominate in the luminescence spectrum. The nature of the luminescence centers responsible for these bands is discussed with the help of the data for electronic structure calculations. The effect of temperature on the luminescent properties of La3Ga5SiO14 is demonstrated. The presence of traps in La3Ga5SiO14 is shown using thermally stimulated luminescence, and their activation energy is determined.



Fine Structure of Impedance Spectra of Crystals with Piezoelectric Effect
Abstract



Magnetism
Vortex-like Structures at the Defects of Uniaxial Films
Abstract
Magnetic inhomogeneities formed at columnar defects of potential-well type in uniaxial films are theoretically studied. It is shown that under some conditions, vortex-like structures occur at such defects; they have a magnetization distribution with three segments of magnetic moments’ rotation. It follows from the analysis of the structure and properties of the vortex-like inhomogeneities, depending on the material parameters, that they are determined mainly by the defect sizes and the depth of the potential well. The experimental data concerning their existence are provided.



Influence of the Thickness of Gadolinium Layers on the Magnetic Properties and Magnetization Reversal Processes in Low-Dimensional Co/Gd/Co Systems
Abstract
Structural and magnetic characteristics and behavior of thin-film Co/Gd/Co systems obtained by ion plasma sputtering in a magnetic field are reported. X-ray studies showed that cobalt layers in all investigated samples have a nanocrystalline structure. The mean roughness Ra of the surface of the samples does not exceed 0.5 nm and is independent of the Gd layer thickness. The shape of hysteresis loops observed for the Co/Gd/Co system depends of the thickness of the Gd layer, tGd. The dependence of the saturation field HS on tGd has an oscillatory character. This fact is explained by interaction of the Co layers through the intermediate Gd layer.



Phase Separation in (Ga,Mn)As Layers Obtained by Ion Implantation and Subsequent Laser Annealing
Abstract
In this paper, we present the results of studies of the spectral, temperature, and field dependences of the transversal Kerr effect in Ga1 – xMnxAs (x = 0.0066–0.033) layers produced by ion implantation and subsequent pulsed laser annealing. The complicated nonmonotonous nature of the temperature dependences of the transversal Kerr effect and its dependence on the measurement range indicate a magnetic inhomogeneity of the layers. The reasons for the inhomogeneity can be the Gaussian distribution of Mn over the thickness of the layers and the electron phase separation in them. The appearance of new features in the spectra of the transversal Kerr effect is explained by the presence in the doped semiconductor matrix of nanoregions with a higher carrier concentration and a higher Curie temperature and a shift of the Fermi level into the valence band leading to an increase in the energy of optical transitions.



Magnetic Properties and Nature of Magnetic State of Intercalated CrxMoSe2 Compounds
Abstract
This is a pioneering work on the synthesis of molybdenum diselenides intercalated by chromium atoms. Their magnetic properties are studied at various intercalant concentrations, temperatures, and magnetic fields. The temperature dependences of effective magnetic moments and positive paramagnetic Curie temperatures in the paramagnetic region evidence the feasible ferromagnetic interactions between intercalated atoms. The existence of low-temperature ferromagnetic state in CrxМоSe2 is confirmed by hysteresis phenomena in temperature and field dependences of magnetization and magnetic susceptibility.



Temperature of the Magnetic Ordering of the Trivalent Iron Oxide ε-Fe2O3
Abstract
The trivalent iron oxide ε-Fe2O3 is a fairly rare polymorphic iron oxide modification, which only exists in the form of nanoparticles. This magnetically ordered material exhibits an intriguing magnetic behavior, specifically, a significant room-temperature coercivity HC (up to ~20 kOe) and a magnetic transition in the temperature range of 80–150 K accompanied by a sharp decrease in the HC value. Previously, the temperature of the transition to the paramagnetic state for ε-Fe2O3 was believed to be about 500 K. However, recent investigations have shown that the magnetically ordered phase exists in ε-Fe2O3 also at higher temperatures and, around 500 K, another magnetic transition occurs. Using the data on the magnetization and temperature evolution of the ferromagnetic resonance spectra, it is shown that the temperature of the transition of ε-Fe2O3 particles 3–10 nm in size to the paramagnetic state is ~850 K.



Asymmetry of Domain Walls Oscillations in Iron Garnet Crystals with Stripe Domain Structure Drift in Harmonic and Pulsed Magnetic Fields
Abstract
An asymmetric displacement of domain walls during their oscillatory motion and an asynchronous change in the velocities of neighboring domain walls have been revealed in iron garnet crystals with different characters of magnetic anisotropy in an alternating harmonic magnetic field at field amplitudes lower than the field initiating the drift motion of the domain structure. It has been established that in a bipolar pulsed magnetic field the displacement of domain walls in the direction of drift exceeds the displacement of domain walls in the direction opposite to drift. A theoretical model in which asymmetry in the oscillations of domain walls and drift appear due to anisotropy in the attenuation parameter is proposed.



Motion of Coupled Magnetic Vortices in Parallel Nanostripes
Abstract
The periodic motion of the interacting vortex domain walls in a pair of nanostripes has been theoretically investigated. As a model, two parallel nanostripes with magnetization inhomogeneities in the form of magnetic vortices have been examined. The magnetic subsystems of the stripes are magnetostatically coupled. The quasi-elastic coupling between vortices ensures the existence of normal modes of the periodic magnetization motion. The frequencies of these modes have been calculated. It is shown that not any combination of the vortex topological charge leads to the resonant behavior of magnetization in ac fields. The effect of the static component of a magnetic field on the frequency of the periodic motion of vortex domain walls is discussed.



Ferroelectricity
Electric Polarization in ErCrO3 Induced by Restricted Polar Domains
Abstract
Electric polarization in ErCrO3 single crystals has been investigated in the temperature range of 5‒370 K. Ferroelectric ordering has not been found in any of the directions. However, electric polarization induced by restricted polar domains of structural origin has been observed. These domains are formed in the crystal matrix near impurity Bi3+ ions partially substituting Er3+ ions during the growth of single crystals by the method of spontaneous crystallization using solvent Bi2O3. The restricted polar domains form the superparaelectric state. Hysteresis loops with remanent polarization, both along the c axis and in the [110] directions, have been observed below some temperatures Tfr (in the frozen superparaelectric state). The polarization exists up to certain temperatures, which depend on the applied electric field orientation with respect to the crystal axes and exceed significantly temperature TN of magnetic ordering. These temperatures correspond to the condition kTfr ≈ EA for activation barriers at the boundaries of the restricted polar domains.






Mechanical Properties, Physics of Strength, and Plasticity
Thermal Fluctuations and Resonance Properties of Scanning Probes Based on Carbon Nanotubes
Abstract
The design of cantilevers and microelectromechanical systems based on carbon nanotubes necessitates a thorough study of their thermal fluctuations and resonance properties. This work aims at the simulation of thermal fluctuations and power spectral density for single-walled carbon nanotubes in the context of the continuous model of elastic cylindrical membranes with nonmacroscopic thicknesses. The conditions imposed on the geometry of this probe and providing its stable operation, as well as the high lateral resolution determined by only the radius of the nanotube independently on its thermal vibrations, are found, as well. The most intensive resonance modes, making the greatest contribution to the thermal fluctuations of carbon nanotubes, are established, and their frequencies are found analytically.



Impurity Centers
Cobalt in Strontium Titanate as a New Off-Center Magnetic Impurity
Abstract
The local structure and charge state of the cobalt impurity in SrTiO3 is studied by X-ray absorption fine structure (XAFS) spectroscopy. The synthesis conditions, under which cobalt predominantly (up to 76%) substitutes the atoms at the A site of the perovskite structure, is found for SrTiO3(Co) samples. By varying the synthesis conditions, it is possible to appreciably change the ratio between the concentrations of cobalt atoms incorporated into the A and B sites. It is established that the charge state of cobalt is +2 at the A site and +3 at the B site. It is revealed that the Co impurity at the A site is off-center, and its deviation from the lattice site is 1.0 Å. First-principles calculations show that the isolated Co3+ ion at the B site is diamagnetic, whereas the Co2+ ion at the A site is in a high-spin state (S = 3/2).



Optical Properties
Optical Properties of Multilayer BaTiO3/SiO2 Film Structures Formed by the Sol–Gel Method
Abstract
Multi-layer film structures BaTiO3/SiO2 with a thickness of ~1 μm containing up to 14 pairs of layers were synthesized by the sol–gel method with sequential heat treatment. It is shown that the synthesized structures are X-ray amorphous. The formation of bands in the transmission and reflection spectra caused by interference effects is demonstrated. A more regular structure exhibits a photon band gap (opacity band) in the visible range with main minimum at 636 nm and corresponding maximum in the reflection spectra. Dispersion characteristics of barium titanate films with different concentrations of initial sols were studied and an increase in the refractive index with an increase in the concentration of sol was demonstrated. For a sol with a concentration of 60 mg/mL, the refractive index in the spectral range of 390–1600 nm is 1.88–1.81. The prospects of sol–gel technology for the formation of BaTiO3/SiO2 structures for nanophotonics and solar radiation converters are discussed.



Emission Kinetics of Surface (Bi)Excitons in ZnO Thin Films
Abstract
The kinetics of near-edge photoluminescence (PL) in ZnO nanofilms prepared by the atomic layer deposition has been investigated. It is established that the kinetics of near-edge PL in 4-nm films is determined to a great extent by surface 2D-exciton (SX) and biexciton (SXX) complexes. The contribution from surface biexcitons is estimated based on a photostimulated change in the surface potential in ZnO films with different thicknesses. Ultrafast dynamics of surface biexcitons in thin films are revealed. It is shown that biexcitons localized near the surface have the shortest radiative lifetime (less than 100 ps) among all bound exciton complexes, which is explained by the large oscillator strength.



Linear and Nonlinear Magneto-optical Phenomena in Epitaxial Films of Europium Chalcogenides EuX (X = O, Se, Te)
Abstract
The studies of magneto-optical effects in epitaxial films of magnetic semiconductors—europium chalcogenides EuX (X = O, Se, Te) are presented: linear and quadratic magneto-optical Kerr effects, photo-induced Faraday effect, magnetically-induced optical second and third harmonics generation, the inverse Faraday effect, and the phenomenon of optical orientation. A large quadratic magneto-optical Kerr effect was found in EuO and (Eu, Gd)O films. Photo-induced spin polarons with a huge value of the magnetic moment were studied in europium chalcogenides EuTe and EuSe using the optical pump-probe technique. In the same materials, a new type of nonlinear magneto-optical susceptibility, which is responsible for the optical second harmonic generation and associated with the magnetic ordering of the spins of Eu2+ ions, is revealed.



Exciton Light Emission of CdTe/ZnTe Heterostructures with Double Ultrathin Narrow-Gap Layers
Abstract
The exciton luminescence spectra of CdTe/ZnTe heterostructures containing two thin CdTe layers separated by barriers of different thickness were studied. The complex temperature dependence of the intensity of luminescence from these layers in its underbarrier and abovebarrier excitation led to the conclusions about the effect of the thickness of the barriers on the energy transfer between the CdTe layers and gave the possibility to observe, at specific temperatures, the implementation of a resonant-type excitation. The dependence of the shape of the exciton emission contours on the excitation level gives information about the real structure of CdTe layers with the monolayer thickness of 1.5 and 4.0 monolayers.



Lattice Dynamics



Phase Transitions
Magnetic Phase Transitions to an Incommensurate Magnetic Structure in FeGe2 Compound
Abstract
A symmetry analysis of possible magnetic structures in an incommensurate magnetic phase in FeGe2 compound, resulted from phase transitions from the paramagnetic phase, was performed based on a phenomenological consideration. It is shown that two possible approaches to a such an analysis, the first of which uses the magnetic representation of the space group, and the second one is based on the expansion of the magnetic moment in basis functions of irreducible representations of the space group of the paramagnetic phase, yield the same results. Space group irreducible representations are determined, according to which the transition to an incommensurate structure can occur. The set of these representations appears identical in both approaches. Ginzburg–Landau functionals for analyzing the transitions according to these representations are written. A renormalization group analysis of the second-order phase transitions from the paramagnetic state to the incommensurate magnetic structure is performed. It is shown that a helical magnetic structure can arise in the incommensurate phase as a result of two second-order phase transitions at the transitions temperature.



Low-Dimensional Systems
The Structure and Electrophysical Properties of Multiwall Carbon Nanotubes Subjected to Argon Ion Bombardment
Abstract
The morphology, structure, and electrophysical characteristics of multiwall carbon nanotubes (MWCNTs), as affected by defects induced by ion bombardment, are studied using Raman spectroscopy and scanning and transmission electron microscopies. Annealing in an inert atmosphere results in partial recovery of the nanotube structure: the nanotube walls contain regions of recovered graphene structure and regions plagued with extended defects that result in corrugation of graphene layers comprising the walls of MWCNTs. These structural alterations result in a marked decrease in conductivity of the processed MWCNTs.



Localization of Excitations in a Layered Structure with Interfaces Characterized by a Nonlinear Response
Abstract
The features of localization of excitations in a three-layer structure in which linear media are separated by boundaries with their own nonlinear response have been examined. It is shown that in the three-layer structure under consideration, localized states of two types can exist that differ in the distribution of the field in the inner layer, as well as in the frequency range of existence. Dispersion relations have been obtained that determine the energy dependence on system parameters in each case. The damping factors of surface waves are obtained in an explicit form. The conditions of the field localization are specified, depending on the characteristics of the layers and their interfaces. The energies of localized states have been found that do not exist in a symmetric structure without a wave interacting with the interfaces of the layers. Moreover, the presence of a nonlinear response of the boundaries is mandatory. It is shown that the interaction of a wave with the interfaces of the layers can lead to the absence of a localized state in a one-dimensional symmetric potential well with infinitely high walls and a nonlinear response. The influence of the media parameters and their interfaces on the flux carried by surface waves has been analyzed.



Surface Physics and Thin Films
Effect of Oxygen on the Conductive Properties of Thin Films of Nonconductive Polymer
Abstract
The influence of the atmosphere on the electrical conductivity of polydiphenylenephthalide (PDP) films included in the ITO–PDP–Sb sandwich structure is discussed. On the basis of electrophysical measurements and quantum-chemical simulation, a conclusion is drawn that the main contribution to the electrical conductivity of the PDP films comes from oxygen.



Two-Stage Conversion of Silicon to Nanostructured Carbon by the Method of Coordinated Atomic Substitution
Abstract
A fundamentally new method of obtaining epitaxial layers of nanostructured carbon on silicon substrates has been considered. Epitaxial growth in the case of seemingly incompatible lattices has been achieved by converting the crystal by the method of coordinated substitution of atoms, in which the overall structure of the bonds between the atoms is not destroyed. In the first stage of conversion, the first half of the silicon atoms are concertedly replaced by the carbon atoms due to the reaction of silicon with CO gas, during which an epitaxial layer of SiC–3C cubic silicon carbide is obtained. In the second stage of conversion, the remaining half of silicon atoms is concertedly replaced by carbon atoms due to the reaction of SiC with CF4 gas. Carbon structures with different properties from nanodiamonds to nanotubes and carbon nanoonions have been obtained depending on the orientation of the silicon surface, pressure of the reagent gas, and temperature and growth time. A key feature of this method is that the substrate orders the resulting structures using the original chemical bonds between the atoms in silicon. The term “concertedly” means that new chemical bonds are formed simultaneously and concertedly with the destruction of old bonds. Data on electron diffraction and analysis of Raman and ellipsometric spectra of the obtained samples of nanostructured carbon on silicon substrates have been presented. Two competing growth mechanisms have been discussed.



Dielectric Parameters of Elastically Strained Heteroepitaxial SrTiO3 Films
Abstract
Three-layer epitaxial SrRuO3/SrTiO3/SrRuO3 heterostructures with the 900-nm-thick intermediate layer of strontium titanate have been grown on single-crystal (001)La0.29Sr0.71Al0.65Ta0.35O3 substrates by the laser evaporation method. Plane-parallel film capacitors have been formed on the basis of the grown heterostructures using photolithography and ion etching. Temperature dependences of the dissipation factor have been measured for these capacitors at different bias voltages applied to strontium ruthenate electrodes. Temperature dependences of the permittivity of the intermediate SrTiO3 layer in the formed capacitor structures are visualized with compensation of the internal electric field and without it. The reasons for the sharp increase in the dielectric loss in the formed film capacitors at temperatures below 50 K are analyzed.



Polymers
Atomic Composition and Morphology of Thin Films of Resveratrol Deposited on Oxidized Silicon and Polycrystalline Gold Surfaces
Abstract
The atomic composition of films of a polyphenol antioxidant, namely, resveratrol (RVL), with a thickness of up to 50 nm thermally deposited on an oxidized silicon surface is studied by the method of X-ray photoelectron spectroscopy (XPS). It is found that the surface area of pores in the RVL film is about 15% of the total surface area. The results of studying the stability of the RVL films when their surface is treated with Ar+ ions of 3 keV under the electric current of 1 μA passing through the sample for 30 s are given. The treatment gives rise to an increase in the area of pores to 30–40%, while the ratio of the concentration of C atoms to the concentration of O atoms in the RVL film both before and after the treatment of the surface with ions does not correspond to the chemical formula of RVL molecules. Using the method of atomic force microscopy (AFM) in contact mode with a scanning area size of about 10 × 10 μm, RVL coatings deposited on the oxidized silicon and polycrystalline Au surfaces are studied. It is found that the RVL films produce grainy and porous coatings on the substrate surfaces. The typical size of grains in the sample surface plane is 150–300 nm, and the characteristic elevation reaches 30 nm.



Fullerenes
On the Thermal Stability of Some Quasi-Fullerenes
Abstract
The thermal stability of recently predicted quasi-fullerenes С20, С42, С48, and С60 is studied by the method of molecular dynamics. The routes of their decomposition and the temperature dependences of their lifetimes are determined. The activation energy and frequency factor values that appear in the Arrhenius law are found. New isomers are detected.



Graphenes
On the Decoration of Zigzag Edges of an Epitaxial Graphene Nanoribbon
Abstract
A double-chain model of an epitaxial graphene nanoribbon, the zigzag edges of which are decorated with foreign adparticles, has been proposed. The substrate is assumed to be a metal. Analytical expressions for the Green’s functions of carbon adatoms and adparticles are obtained. The band spectrum for the free state is determined, and the approximation of the density of states is proposed. Analytical expressions for the occupation numbers in the mode of tight binding between the adsorption complex and the substrate are presented. A chain of carbon adatoms decorated with adparticles (epicarbyne) is considered.



To the Theory of Electronic States of an Epitaxial Graphene Bilayer
Abstract
The energy spectrum of an epitaxial graphene bilayer is investigated. The most general case of spontaneous breaking of the P symmetry within and between the layers is considered. The influence of the gate voltage on the energy spectrum is studied. It is shown that a general profile of this influence substantially depends on the ratio between bandgaps corresponding to different layers. At a certain value of the Coulomb potential caused by the transition of a charge from the substrate, the bandgap collapses. These studies are carried out for two types of layer packing in the bilayer, namely, the AB and AA packings.



Erratum


