To the Theory of Electronic States of an Epitaxial Graphene Bilayer
- 作者: Abdullaev G.O.1, Alisultanov Z.Z.1,2
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隶属关系:
- Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
- Dagestan State University
- 期: 卷 61, 编号 3 (2019)
- 页面: 488-492
- 栏目: Graphenes
- URL: https://journal-vniispk.ru/1063-7834/article/view/205120
- DOI: https://doi.org/10.1134/S1063783419030028
- ID: 205120
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详细
The energy spectrum of an epitaxial graphene bilayer is investigated. The most general case of spontaneous breaking of the P symmetry within and between the layers is considered. The influence of the gate voltage on the energy spectrum is studied. It is shown that a general profile of this influence substantially depends on the ratio between bandgaps corresponding to different layers. At a certain value of the Coulomb potential caused by the transition of a charge from the substrate, the bandgap collapses. These studies are carried out for two types of layer packing in the bilayer, namely, the AB and AA packings.
作者简介
G. Abdullaev
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: zaur0102@gmail.com
俄罗斯联邦, Makhachkala
Z. Alisultanov
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences; Dagestan State University
编辑信件的主要联系方式.
Email: zaur0102@gmail.com
俄罗斯联邦, Makhachkala; Makhachkala
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